Description

Silicon Carbide (SiC), a wide bandgap material due to its superior thermal and electrical properties has emerged as a key enabling material that has the potential to displace silicon-based diodes and transistors in the high-power electronics area. This service researches the role of SiC as a substrate material for diodes and transistors for power electronic applications in the renewable energy sector, utilities and industrial sector. The research service provides insights on current state-of-the art and future technology trends associated with SiC based electronic devices. Opportunities for silicon carbide based diodes, unipolar and bipolar transistors for emerging and existing high power applications are evaluated in this research service.