Innovations in Next-gen Data Storage, Semiconductors, and Microprocessors

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This issue of Microelectronics TOE covers recent developments in next-gen data storage, semiconductors, and microprocessors. Innovations profiled include skyrmions for next-gen data storage and processing by the National University of Singapore (NUS), development of reduced graphene oxide (rGO) electronics by the North Carolina State University, semiconductor material suitable for optoelectronic devices by the University of Southern California (USC), molybdenum disulphide-based microprocessors by the Vienna University of Technology, and a silicon on insulator substrate for gallium nitride components by the Aalto University.The Microelectronics TechVision Opportunity Engine (TOE) captures global electronics-rel

Table of Contents

Innovations in Next-gen Data Storage, Semiconductors, and MicroprocessorsRecent Developments in Next-gen data storage, Semiconductors, and MicroprocessorsSkyrmions for Next-Gen Data Storage and ProcessingDevelopment of Reduced Graphene Oxide (rGO) ElectronicsSemiconductor Material suitable for Optoelectronic devicesMolybdenum Disulphide-based MicroprocessorsSilicon on Insulator Substrate for Gallium Nitride ComponentsIndustry Contacts

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