This issue covers developments in compound semiconductor technologies such as silicon carbide (SiC) and gallium nitride (GaN), and provides strategic insights on IP activity, target applications, growth factors, and research focus areas. Innovations profiled include a high-efficiency gallium nitride transistor built on diamond substrate, GaN diode developed by Panasonic, and a GaN transistor with high electron mobility.
The Microelectronics TechVision Opportunity Engine (TOE) captures global electronics-related innovations and developments on a weekly basis. Developments are centered on electronics attributed by low power and cost, smaller size, better viewing, display and interface facilities, wireless connectivity, higher memory capacity, flexibility and wearables. Research focus themes include small footprint lightweight devices (CNTs, graphene, 3D ICs, flexible electronics – barrier films/encapsulation and advanced deposition techniques [atomic layer deposition]), smart monitoring and control (advanced displays, touch and haptics), next generation data storage (MRAM, NRAM, PRAM, FRAM), energy efficiency (LEDs, OLEDs, power and thermal management, energy harvesting), and high speed and improved conductivity devices (SiC, GaN, GaAs).
Miniaturization, a move toward lower power consumption and the need for enhanced features are driving innovations in the electronics sector. Technology focus areas include semiconductor manufacturing and design, flexible electronics, 3D integration/IC, MEMS and NEMS, solid state lighting, advanced displays, nanoelectronics, wearable electronics, wireless charging, brain computer interface, advanced displays, near field communication, and next generation data storage or memory.
Keywords: Silicon carbide (SiC) gallium nitride (GaN), power electronics, compound semiconductor