Microelectronics Technology--Innovations in Silicon Carbide and Gallium Nitride

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This issue covers developments in compound semiconductor technologies such as silicon carbide (SiC) and gallium nitride (GaN), and provides strategic insights on IP activity, target applications, growth factors, and research focus areas. Innovations profiled include a high-efficiency gallium nitride transistor built on diamond substrate, GaN diode developed by Panasonic, and a GaN transistor with high electron mobility.The Microelectronics TechVision Opportunity Engine (TOE) captures global electronics-related innovations and developments on a weekly basis. Developments are centered on electronics attributed by low power and cost, smaller size, better viewing, display and interface facilities, wireless connecti

Table of Contents

Microelectronics Technology--Innovations in Silicon Carbide and Gallium NitrideInnovations in Silicon Carbide and Gallium NitrideHigh-Efficiency Gallium Nitride Transistors on Diamond SubstrateLow Turn-on Voltage and High Current Operation with GaN DiodesGallium Nitride Transistors with High Electron MobilitySilicon Carbide Diodes Increase Efficiency of Frequency ConvertersStrategic PerspectivesStrategic PerspectivesStrategic Perspectives (continued)Industry Contacts




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